1 general description HM20N60A, the silicon n-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. the transistor can be used in various power switching circuit for system miniaturization and higher efficiency. the package form is to-3p(n), which accords with the rohs standard.. features l fast switching l low on resistance (rdso n 0.45 ? ) l low gate charge ( typical data:61nc) l low reverse transfer capacitances (typical: 20pf) l 100% single pulse avalanche energy test applications power switch circuit of adaptor and charger. absolute tc= 25 unless otherwise specified symbol parameter rating units v dss drain-to-source voltage 600 v continuous drain current 20 a i d continuous drain current t c = 100 c 14 a i dm a1 pulsed drain current 80 a v gs gate-to-source voltage 30 v e as a2 single pulse avalanche energy 1200 mj e ar a1 avalanche energy ,repetitive 100 mj i ar a1 avalanche current 4.5 a dv/dt a3 peak diode recovery dv/dt 5.0 v/ns power dissipation 250 w p d derating factor above 25 c 2.0 w/ t j t stg operating junction and storage temperature range 150 C55 to 150 t l maximumtemperature for soldering 300 v dss 600 v i d 20 a p d (t c =25 ) 250 w r ds(on)typ 0.36 ? HM20N60A shenzhen h&m semiconductor co.ltd http //www.hmsemi.com
HM20N60A electrical cha racteristics tc= 25 unless otherwise specified off characteristics rating symbol parameter test conditions min. typ. max. units v dss drain to source breakdown voltage v gs =0v, i d =250 a 600 -- -- v bv dss / t j bvdss temperature coefficient id=250ua,reference2 5 -- 0.65 -- v/ v ds = 600v, v gs = 0v, t a = 25 -- -- 1 i dss drain to source leakage current v ds =480v, v gs = 0v, t a = 125 100 a i gss(f) gate to source forward leakage v gs = 30v -- -- 100 na i gss(r) gate to source reverse leakage v gs =-30v -- -- -100 na on characteristics rating symbol parameter test conditions min. typ. max. units r ds(on) drain-to-source on-resistance v gs =10v,i d =10a -- 0 .36 0.45 ? v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4 .0 v pulse width tp 380 s, ?2% dynamic characteristics rating symbol parameter test conditions min. typ. max. units g fs forward transconductance v ds =15v, i d =10a -- 17 -- s c iss input capacitance -- 2847 c oss output capacitance -- 252 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1.0mhz -- 20 pf resistive switching characteristics rating symbol parameter test conditions min. typ. max. units t d(on) turn-on delay time -- 36 tr rise time -- 73 t d(off) turn-off delay time -- 166 t f fall time i d =20a v dd = 300v r g = 25 ? -- 73 ns q g total gate charge -- 61 q gs gate to source charge -- 14 -- q gd gate to drain ( miller)charge i d =20a v dd =300v v gs = 10v -- 24 -- nc 2 shenzhen h&m semiconductor co.ltd http //www.hmsemi.com
source-drain diode characteristics rating symbol parameter test conditions min. typ. max. units i s continuous source current (body diode) -- -- 20 a i sm maximum pulsed current (body diode) -- -- 80 a v sd diode forward voltage i s =20a,v gs =0v -- -- 1 . 5 v trr reverse recovery time -- 425 -- ns qrr reverse recovery charge i s =20a,t j = 25 c di f /dt=100a/us, v gs =0v -- 3 . 7 -- c pulse width tp 380 s, ?2% symbol parameter typ. units r jc junction-to-case 0.5 /w r ja junction-to-ambient 40 /w a1 repetitive rating; pulse width limited by maximum junction temperature a2 l=10mh, i d =15.5a, start t j =25 a3 i sd =20a,di/dt 200a/us,v dd bv dss, start t j =25 HM20N60A 3 shenzhen h&m semiconductor co.ltd http //www.hmsemi.com
tc , case temperature , c 50 pd , power dissipation ,watts 120 0 0 40 80 25 200 160 240 280 100 75 125 150 characteristics curve 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration,seconds thermal impedance, normalized 0 10 20 30 40 50 60 70 0 10 20 30 40 50 vds , drain-to-source voltage , volts id , drain current , amps id , drain current , amps tc , case temperature , c 75 25 0 50 100 125 150 0 5 25 20 15 10 vds , drain-to-source voltage , volts 100 id , drain current , amps 1 0.1 1 10 10 100 1000 figure 2 maximun power dissipation vs case temperature figure 5 maximum effective thermal impendance , junction to case f igure 4 typical outp ut characteristics figure 3 maximum continuous drain current vs case temperature figure 1 maximun forward bias safe operating area 10 s 100 s 10 ms dc operation in this area may be limited by r ds(on) t j =max rated t c =25 single pulse p dm t2 t1 notes duty factor d=t1/ t2 peak tj=p dm *z thjc *r thjc +t c 50% 20% 10% 5% single pulse 2% 1% pulse test tc = 25 1 ms first: 15v 8v 7v 6.5v 6v sixth: 5.5v first sixth HM20N60A 4 shenzhen h&m semiconductor co.ltd http //www.hmsemi.com
0 0.2 0.4 0.6 0.8 1 1.2 1.4 4 6 8 10 12 14 vgs , gate to source voltage volts rds(on), drain to source on resistance , ohms 0 0.5 1 1.5 2 2.5 3 -100 - 50 0 50 100 150 200 tj, junction temperature , c rds(on), drain to source on resistance, nomalized 0 0.2 0.4 0.6 0.8 1 0 10 20 30 40 50 60 70 id , drain current , amps resistance , ohms rds(on), drain to source on 0.1 1 10 100 2 4 6 8 10 vgs , gate to source voltage , volts id , drain current , amps idm , peak current , amps 1.00e-01 1.00e-05 1.00e- 04 1.00e-03 1.00e-02 pulse width , seconds t 1.00e+00 1000 1.00e+01 100 10 f igure 6 maximun peak current capability figure 8 typical drain to source on resistance vs gate voltage and drain current figure 7 typical transfer characteristics figure 10 typical drian to source on resistance vs junction temperature figure 9 typical drain to source on resistance vs drain current transconductance may limit current in this region for temperatures above 25 derate peak current as follows: ? ? - = 125 150 25 c t ii +150 +25 -55 i d = 18a i d = 9a i d = 4.5a v gs =10v v gs =20v pulse duration = 10 s duty factor = 0.5%max tc =25 pulsed test v ds =50v pulsed test tc =25 vgs=10v id=3.0a v gs =10v HM20N60A 5 shenzhen h&m semiconductor co.ltd http //www.hmsemi.com
0.1 1 10 100 0 0.4 0.8 1.2 1.6 vsd , source - drain voltage , volts isd, reverse drain current , amps 0 2 4 6 8 10 12 0 15 30 45 60 75 qg , total gate charge , nc vgs , gate to source voltage ,volts 0 1000 2000 3000 4000 5000 0.1 1 10 100 vds , drain - source voltage , volts capacitance , pf 0.8 0.9 1 1.1 1.2 -100 -50 0 50 1 00 150 200 tj, junction temperature , c bvdss,drain to source breakdown voltage, normalized -50 vgs(th),threshold voltage, nomalized 0.5 -75 0.4 1.1 0.8 0.6 0.7 0.9 1 1.2 150 tj, junction temperature , c 50 250 -25 125100 75 175 figure 13 typical capacitance vs drain to source voltage figure 16 unclamped inductive switching capability figure 15 typical body diode transfer characteristics figure 14 typical gate charge vs gate to source voltage tav , time in avalanche , seconds 1.00e-06 0.1 1.00e-05 10 id , drain current , amps 1 100 1.00e-04 1.00e- 03 1.00e- 02 1.00e-01 ciss coss crss v gs =0v , f=1mhz ciss=cgs+cgd coss=cds+cgd crss=cgd vdd=200v id=18a tc =25 starting tj = 25 starting tj = 150 if r=0: t av =(l* i as ) / (1.38v dss -v dd ) if r 0: t av =(l/r) in[ias*r/ (1.38v dss -v dd )+1] r equals total series resistance of drain circuit figure 11 typical theshold voltage vs junction temperature figure 12 typical breakdown voltage vs junction temperature vgs=0v id=250 a vgs=0v id=250 a pulse test v gs =0v 150 25 vds=120v vds=300v vds=480v HM20N60A 6 shenzhen h&m semiconductor co.ltd http //www.hmsemi.com
testcircuitandwaveform HM20N60A 7 shenzhen h&m semiconductor co.ltd http //www.hmsemi.com
HM20N60A 8 shenzhen h&m semiconductor co.ltd http //www.hmsemi.com
package information to-3p(n) package values(mm) items min max a 15.10 15.90 b 19.30 20.50 c 4.70 4.90 d 1.40 1.60 e 0.90 1.10 f 0.50 0.70 g1 2.00 2.20 g2 3.00 3.20 h 3.00 3.60 i 1.20 1.60 l 19.00 21.00 n 5.25 5.65 3.10 3.30 HM20N60A 9 shenzhen h&m semiconductor co.ltd http //www.hmsemi.com
the name and content of poisonous and harmful material in products hazardous substance part s name pb hg cd cr(vi) pbb pbd e limit 0.1% 0.1% 0.01% 0.1% 0.1% 0.1% lead frame molding compound chip wire bonding solder note means the hazardous material is under the criterion of sj/t11363-2006. means the hazardous material exceeds the criterion of sj/t11363-2006. the plumbum element of solder exist in products presently, but within the allowed range of eurogroup s rohs. warnings 1. exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. it is suggested to be used under 80 percent of the maximun ratings of the device. 2. when installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. vdmosfets is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. HM20N60A 10 shenzhen h&m semiconductor co.ltd http ? //www.hmsemi.com
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